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Title:Predictable Reactive Ion Etching of Gallium-Arsenide and Aluminum - Gallium-Arsenide in Hydrogen-Chloride/argon Radio Frequency Discharges
Author(s):Nordheden, Karen Jean
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Electronics and Electrical
Abstract:The reactive ion etch rate of GaAs in HCl/Ar discharges has been studied as a function of RF power, gas mixture, and applied bias. The bias voltage, defined as the difference between the substrate and the time averaged plasma floating potentials, was found to best predict the etch rate. The etch rate of AlGaAs was equivalent to that of GaAs. Optical emission, electron density, and probe measurements were conducted and related to the etch rate results.
Issue Date:1988
Type:Text
Description:58 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988.
URI:http://hdl.handle.net/2142/69417
Other Identifier(s):(UMI)AAI8908791
Date Available in IDEALS:2014-12-15
Date Deposited:1988


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