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Title:Residual Impurity Incorporation in the Growth of High Purity Gallium-Arsenide by Metalorganic Chemical Vapor Deposition
Author(s):Reed, Andrew Dean
Doctoral Committee Chair(s):Stillman, Gregory E.
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Electronics and Electrical
Abstract:Although low compensation, undoped n-type GaAs is needed for many device applications, residual impurities limit the purity of metalorganic chemical vapor deposition grown material. Novel experimental techniques were developed and used to identify the sources and incorporation mechanisms of germanium, the dominant residual donor, and carbon, the dominant residual acceptor.
L-optimal and D-optimal statistically designed experiments were used to determine the influence of 14 growth parameters on the donor and acceptor concentrations and the 77 K mobility of MOCVD grown GaAs. The source of the germanium impurity was found to be in the AsH$\sb3$ and it incorporates via a simple mechanism; the germanium donor concentration is directly proportional to the AsH$\sb3$ partial pressure and inversely proportional to the TMGa partial pressure. The source of the carbon impurity was found to be the TMGa molecule. There is a complex incorporation mechanism involving the loss of the first methyl radical from gas phase TMGa and the loss of the first hydrogen atom from AsH$\sb3$ adsorbed on the substrate surface.
Issue Date:1988
Description:111 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988.
Other Identifier(s):(UMI)AAI8908811
Date Available in IDEALS:2014-12-15
Date Deposited:1988

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