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Title:Mechanisms of Gallium-Arsenide Crystal Growth and Doping by Sputter Deposition: The Role of Ion-Surface Interactions
Author(s):Barnett, Scott Alexander
Department / Program:Metallurgy and Mining Engineering
Discipline:Metallurgical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Materials Science
Abstract:GaAs films were grown on (100) GaAs substrates using a modified sputter deposition technique. Structural, chemical, and electrical analysis of the as-deposited films indicated that they were high quality, stoichiometric single crystals. Ion bombardment played an important and sometimes dominant role in determining GaAs film growth kinetics and physical properties by effecting elemental incorporation probabilities of residual impurities, constituent elements, and dopant impurities. Experimental results are interpreted and modeled based on ion-surface interaction effects, including trapping, sputtering, preferential sputtering, and collisional mixing.
Issue Date:1982
Description:104 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1982.
Other Identifier(s):(UMI)AAI8302799
Date Available in IDEALS:2014-12-16
Date Deposited:1982

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