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Title:An in Situ Study of the Stresses in Silicide Thin Films
Author(s):White, George Eugene
Department / Program:Metallurgy and Mining Engineering
Discipline:Metallurgical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Materials Science
Abstract:A novel technique has been introduced to determine the film stress of metal silicon interfaced materials in-situ. This technique requires the use of a spatially wide yet highly collimated white beam of synchrotron radiation, and a properly chosen filter. The technique is properly termed Absorption Edge Contour (AEC) Mapping. With the aid of a real time imaging system it is possible to observe changes in stress of silicide materials during various stages of film fabrication, as well as assess the character of the silicon substrate. Also another novel technique utilizing conventional x-rays is presented which allows one to determine the growth kinetics of a silicide material in-situ.
Issue Date:1987
Description:228 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1987.
Other Identifier(s):(UMI)AAI8721783
Date Available in IDEALS:2014-12-16
Date Deposited:1987

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