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Title:Thermodynamic and Kinetic Studies of (iii-V)(1-X)(iv(2))(x) Semiconducting Thin Films
Author(s):Fang, Shushan
Doctoral Committee Chair(s):Greene, J.E.
Department / Program:Metallurgy and Mining Engineering
Discipline:Metallurgical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Materials Science
Abstract:A theory to calculate (III-V)$\sb{\rm 1-x}$(IV$\sb2$)$\sb{\rm x}$ pseudobinary phase diagrams was developed. Activities of zincblende-structure and diamond-structure (III-V)$\sb{\rm 1-x}$(IV$\sb2$)$\sb{\rm x}$ solid solutions were derived. Good agreements between experimental and theoretical results for GaAs-Ge, BaSb-Ge, and GaAs-Sn systems were obtained. A model was developed to predict zincblende to diamond phase transformation would occur at x$\sb{\rm c}$ = 0.26. Single-phase polycrystalline (GaAs)$\sb{\rm 1-x}$(Sn$\sb2$)$\sb{\rm x}$ films were grown by Rf-sputter deposition with x up to 0.06 for V$\sb{\rm s}$ (substrate bias) = 75 V, and up to 0.17 for V$\sb{\rm s}$ = 225 V. The reaction path of metastable (GaAs)$\sb{\rm 1-x}$(Sn$\sb2$)$\sb{\rm x}$ alloys followed the sequence: (1) metastable single phase, (2) GaAs rich and $\alpha$-Sn-rich phases, (3) $\alpha$-Sn transformed into $\beta$-Sn, and (4) $\beta$-Sn transformed into liquid. No single phase metastable (GaAs)$\sb{\rm 1-x}$(Sn$\sb2$)$\sb{\rm x}$ alloys were obtained by annealing amorphous ion-mixed GaAs/Sn multilayer films, and the reaction path followed the sequence: (1) amorphous, (2) mixtures of (GaAs)$\sb{\rm 1-x}$(Sn$\sb2$)$\sb{\rm x}$ alloys, GaAs, $\beta$-Sn, and $\alpha$-Sn, (3) $\alpha$-Sn transformed into $\beta$-Sn, and (4) $\beta$-Sn transformed into the liquid phase.
Issue Date:1988
Type:Text
Description:118 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988.
URI:http://hdl.handle.net/2142/71856
Other Identifier(s):(UMI)AAI8908676
Date Available in IDEALS:2014-12-16
Date Deposited:1988


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