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Title:Real-Space Transfer Transistors Grown by Metalorganic Chemical Vapor Deposition
Author(s):Favaro, Michael Ernest
Doctoral Committee Chair(s):Coleman, James J.
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Electronics and Electrical
Abstract:This thesis describes the fabrication and characterization of real-space transfer transistors which are grown by metalorganic chemical vapor deposition. In the negative-resistance field-effect transistor and the charge-injection transistor, the standard GaAs electron channel is replaced with a strained-layer ln$\sb{x}$Ga$\sb{1-x}$As electron channel. With increasing indium composition in the channel, the drain current peak-to-valley ratio, at room temperature, is increased from 1.7 in GaAs electron channel devices to over 1200 in ln$\sb{0.22}$Ga$\sb{0.78}$As electron channel devices.
In addition, the real-space transfer of holes is reported. The real-space transfer of holes is used to demonstrate a p-channel negative-resistance field-effect transistor. A drain current peak-to-valley ratio of 1.6 at a temperature of 26K is measured.
Issue Date:1992
Description:78 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1992.
Other Identifier(s):(UMI)AAI9236457
Date Available in IDEALS:2014-12-16
Date Deposited:1992

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