Files in this item
|(no description provided)|
|Title:||Transverse and Longitudinal Tunneling in Confined Heterostructures|
|Author(s):||Bigelow, Jeffrey Mark|
|Doctoral Committee Chair(s):||Leburton, J.P.,|
|Department / Program:||Electrical Engineering|
|Degree Granting Institution:||University of Illinois at Urbana-Champaign|
|Subject(s):||Engineering, Electronics and Electrical|
|Abstract:||In this thesis useful and powerful self-consistent Poisson-Schrodinger solvers are implemented to study novel low-dimensional tunneling effects and their application in confined heterostructures. In particular, three different three-terminal devices are studied which take advantage of the quantum-mechanical nature of electrons and holes to exhibit negative differential resistance (NDR) via tunneling.
A description of a new mechanism of resonant-tunneling real-space transfer is presented which is the source of instabilities and leads to abrupt NDRs in pseudomorphic MODFETs. The theory presented here is validated by experimental results. The current generated by two-dimensional interband tunneling in a bipolar-tunneling field-effect transistor (BiTFET) is calculated using a transfer-Hamiltonian formalism in conjunction with a self-consistent solver. The results demonstrate the potential applications of the BiTFET as a device with extremely abrupt multiple NDRs with high peak-to-valley ratios. Finally a novel numerical technique based on imaginary-time propagation in the split-operator scheme is implemented to solve the two-dimensional Schrodinger equation and successfully reproduce the one-dimensional resonant-tunneling current in a dual-gate FET.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1993.
|Date Available in IDEALS:||2014-12-16|
This item appears in the following Collection(s)
Dissertations and Theses - Electrical and Computer Engineering
Dissertations and Theses in Electrical and Computer Engineering
Graduate Dissertations and Theses at Illinois
Graduate Theses and Dissertations at Illinois