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Title:A Comparative Study of Indium Arsenide/gallium Arsenide Short-Period Superlattice and Alloy Quantum Well Structures on Gallium Arsenide Substrates
Author(s):Roan, Eel-Jye
Doctoral Committee Chair(s):Cheng, Keh-Yung
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Electronics and Electrical
Physics, Condensed Matter
Abstract:A comparison between (InAs)$\sb1$/(GaAs)$\sb1$ short-period-superlattice (SPS) and $\rm In\sb{0.5}Ga\sb{0.5}As$ alloy quantum-well structures grown on GaAs substrates has been made. Structural properties, photoluminescence properties, and thermal stability were investigated. A 1.265-$\mu$n photoluminescence peak wavelength was observed from a 36-A ((InAs)$\sb1$/(GaAs)$\sb1$SPS) /GaAs quantum-well structure at room temperature.
Issue Date:1993
Type:Text
Description:77 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1993.
URI:http://hdl.handle.net/2142/72005
Other Identifier(s):(UMI)AAI9329148
Date Available in IDEALS:2014-12-16
Date Deposited:1993


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