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Title:Graphene etch mask for silicon
Author(s):Rangarajan, Aniruddh
Advisor(s):Lyding, Joseph W.
Department / Program:Electrical & Computer Eng
Discipline:Electrical & Computer Engr
Degree Granting Institution:University of Illinois at Urbana-Champaign
etch mask
xenon difluoride
reactive ion etch
Abstract:In this thesis, an alternative future use for graphene will be explored. Graphene, a popular two-dimensional material of remarkable electrical properties, has been thought to be a successor to current day microelectronic materials. With the many challenges posed by the manufacture of conventional devices from graphene, other adaptations for its properties are sought in the work that follows. Chiefly, its mechanical and chemical strength as an etch mask for silicon is tested.We attempt to present the progress toward a working model of a graphene etch mask. The influence of the mask geometry, etch method, etch conditions, substrate quality and other factors will be explored to present a clear understanding of methodology and requirements for carrying out the process. Along the way, other aspects of the project such as the growth and transfer of graphene, which are not the focus but extremely crucial to the results, will be elucidated as required. Possible future directions will also be presented to provide a notion of where the idea can head.
Issue Date:2015-01-21
Rights Information:Copyright 2014 Aniruddh Rangarajan
Date Available in IDEALS:2015-01-21
Date Deposited:2014-12

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