Files in this item

FilesDescriptionFormat

application/pdf

application/pdfB30-756.pdf (23MB)Restricted to U of Illinois
(no description provided)PDF

Description

Title:Properties of Silicon Implanted with Arsenic through Silicon Dioxide
Author(s):Myers, David Richard
Subject(s):Ion implantation
Arsenic in silicon
Damage
Recoil implantation
Issue Date:1977-01
Publisher:Coordinated Science Laboratory, University of Illinois at Urbana-Champaign
Series/Report:Coordinated Science Laboratory Report no. UILU-ENG 77-2203, R-756
Genre:Report
Type:Text
Language:English
Description:Coordinated Science Laboratory changed its name from Control Systems Laboratory
URI:http://hdl.handle.net/2142/75613
Sponsor:Joint Services Electronics Program / DAAB-07-72-C-0259
National Science Foundation / NSF DMR 73-02359
Date Available in IDEALS:2015-04-22


This item appears in the following Collection(s)

Item Statistics