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application/pdf ![]() ![]() | full text |
Description
Title: | Studies of Electron Traps in Gallium Arsenide and Gallium Arsenide Phosphide by Deep Level Transient Spectroscopy |
Author(s): | Day, Ding-Yuan Samuel |
Subject(s): | DLTS
Semiconductors Defects |
Issue Date: | 1980-03 |
Publisher: | Coordinated Science Laboratory, University of Illinois at Urbana-Champaign |
Series/Report: | Coordinated Science Laboratory Report no. UILU-ENG 80-2209, R-877 |
Genre: | Report (Grant or Annual) |
Type: | Text |
Language: | English |
Description: | Coordinated Science Laboratory changed its name from Control Systems Laboratory |
URI: | http://hdl.handle.net/2142/75652 |
Sponsor: | Joint Services Electronics Program / N00014-79-C-0424 Office of Naval Research / N00014-76-C-0806 |
Date Available in IDEALS: | 2015-04-22 2017-07-14 |