Files in this item
| Files | Description | Format |
|---|---|---|
|
application/pdf  B32-877.pdf (69MB) | (no description provided) |
Description
| Title: | Studies of Electron Traps in Gallium Arsenide and Gallium Arsenide Phosphide by Deep Level Transient Spectroscopy |
| Author(s): | Day, Ding-Yuan Samuel |
| Subject(s): | DLTS
Semiconductors Defects |
| Issue Date: | 1980-03 |
| Publisher: | Coordinated Science Laboratory, University of Illinois at Urbana-Champaign |
| Series/Report: | Coordinated Science Laboratory Report no. UILU-ENG 80-2209, R-877 |
| Genre: | Report |
| Type: | Text |
| Language: | English |
| Description: | Coordinated Science Laboratory changed its name from Control Systems Laboratory |
| URI: | http://hdl.handle.net/2142/75652 |
| Sponsor: | Joint Services Electronics Program / N00014-79-C-0424 Office of Naval Research / N00014-76-C-0806 |
| Date Available in IDEALS: | 2015-04-22 2017-07-14 |