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Title:Experimental Investigation of Hot Electron and Related Effects in Gallium (Aluminum) Arsenide Devices
Author(s):Higman, Ted King
Subject(s):Advance of crystal growth technology
Metalorganic chemical vapor deposition (MOCVD)
Heterojunction devices
Physical properties of semiconductor heterojunction devices
Resonant tunneling
Ballistic transport
Hot electron effects
Issue Date:1989-01
Publisher:Coordinated Science Laboratory, University of Illinois at Urbana-Champaign
Series/Report:Coordinated Science Laboratory Report no. UILU-ENG-89-2209
Genre:Report
Type:Text
Language:English
Description:Coordinated Science Laboratory was formerly known as Control Systems Laboratory
URI:http://hdl.handle.net/2142/75749
Sponsor:Joint Services Electronics Program / N00014-84-C-0149
National Science Foundation Engineering Research Center for Compound Semiconductor Microelectronics / CDR 85-22666
Department of Defense University Research Instrumentation Program / N00014-84-G-0157
Date Available in IDEALS:2015-04-22


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