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Title:X-Ray Generation by Mev Electrons in Silicon: Temperature, Tilt and Thickness Dependence
Author(s):Kozlowski, Robert Edward
Department / Program:Physics
Discipline:Physics
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Physics, Atomic
Abstract:When relativistic electrons strike a single crystal target, sharp peaks are observed in the x-ray spectrum generated. One type of radiation, called coherent bremsstrahlung, results from coherent electron scattering by atoms arranged on the crystal lattice. The other type of radiation is channeling radiation. The electrons channeling near major crystal axes enter quantized orbits and emit x-ray photons as a consequence of transitions between orbits.
I describe my observations of channeling and coherent bremsstrahlung spectra using 2 to 3 MeV electrons incident on targets 1 and 3 (mu)m thick. Large changes in channeling x-ray energies and intensities are observed over a narrow range of temperature from room temperature to 200(DEGREES)C. There are no such large changes in the coherent bremsstrahlung spectra under the same conditions. Intensity measurements over a range of thicknesses for both types of radiation are reported. Finally, changes in the energy of the highest energy channeling peak are found as the channeling axis is tilted away from the electron beam.
Issue Date:1982
Type:Text
Language:English
Description:85 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1982.
URI:http://hdl.handle.net/2142/77346
Other Identifier(s):(UMI)AAI8218501
Date Available in IDEALS:2015-05-13
Date Deposited:1982


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