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Description
Title: | Nanolithographically defined semiconductor quantum dots |
Author(s): | Yu, Lan |
Advisor(s): | Wasserman, Daniel M. |
Contributor(s): | Wasserman, Daniel M. |
Department / Program: | Electrical & Computer Eng |
Discipline: | Electrical & Computer Engr |
Degree Granting Institution: | University of Illinois at Urbana-Champaign |
Degree: | M.S. |
Genre: | Thesis |
Subject(s): | III-V Semiconductor
Light-emitting diode (LED) Quantum dots |
Abstract: | In this thesis,nanolithographically de ned quantum dots are discussed including their fabrication process and optical properties. First, an introduction to the eld of quantum dots (QDs), and the advantages of QD-based optoelectronic devices are provided. The research presents our recent work demonstrating carrier con nement in quantum nanostructures fabricated from epitaxially grown quantum wells (QWs) using a top-down nanosphere lithography, dry-etch and overgrowth fabrication process. Devices are characterized by a current density-voltage (JV) test, electroluminescence (EL) and photoluminescence (PL) spectroscopy. The quantum confi nement is simulated by COMSOL. |
Issue Date: | 2015-03-06 |
Type: | Text |
URI: | http://hdl.handle.net/2142/78307 |
Rights Information: | Copyright 2015 Lan Yu |
Date Available in IDEALS: | 2015-07-22 |
Date Deposited: | May 2015 |
This item appears in the following Collection(s)
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Dissertations and Theses - Electrical and Computer Engineering
Dissertations and Theses in Electrical and Computer Engineering -
Graduate Dissertations and Theses at Illinois
Graduate Theses and Dissertations at Illinois