Nanolithographically defined semiconductor quantum dots

Abstract

In this thesis,nanolithographically de ned quantum dots are discussed including their fabrication process and optical properties. First, an introduction to the eld of quantum dots (QDs), and the advantages of QD-based optoelectronic devices are provided. The research presents our recent work demonstrating carrier con nement in quantum nanostructures fabricated from epitaxially grown quantum wells (QWs) using a top-down nanosphere lithography, dry-etch and overgrowth fabrication process. Devices are characterized by a current density-voltage (JV) test, electroluminescence (EL) and photoluminescence (PL) spectroscopy. The quantum confi nement is simulated by COMSOL.