Files in this item

FilesDescriptionFormat

application/pdf

application/pdfYu_Lan1.pdf (4MB)
(no description provided)PDF

Description

Title:Nanolithographically defined semiconductor quantum dots
Author(s):Yu, Lan
Advisor(s):Wasserman, Daniel M.
Contributor(s):Wasserman, Daniel M.
Department / Program:Electrical & Computer Eng
Discipline:Electrical & Computer Engr
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:M.S.
Genre:Thesis
Subject(s):III-V Semiconductor
Light-emitting diode (LED)
Quantum dots
Abstract:In this thesis,nanolithographically de ned quantum dots are discussed including their fabrication process and optical properties. First, an introduction to the eld of quantum dots (QDs), and the advantages of QD-based optoelectronic devices are provided. The research presents our recent work demonstrating carrier con nement in quantum nanostructures fabricated from epitaxially grown quantum wells (QWs) using a top-down nanosphere lithography, dry-etch and overgrowth fabrication process. Devices are characterized by a current density-voltage (JV) test, electroluminescence (EL) and photoluminescence (PL) spectroscopy. The quantum confi nement is simulated by COMSOL.
Issue Date:2015-03-06
Type:Thesis
URI:http://hdl.handle.net/2142/78307
Rights Information:Copyright 2015 Lan Yu
Date Available in IDEALS:2015-07-22
Date Deposited:May 2015


This item appears in the following Collection(s)

Item Statistics