Files in this item
Files | Description | Format |
---|---|---|
application/pdf ![]() | (no description provided) |
Description
Title: | Characterization of GaN MOS-HEMT trap-related effects for power switching applications |
Author(s): | Zhang, Dabin |
Department / Program: | Electrical & Computer Eng |
Discipline: | Electrical & Computer Engr |
Degree Granting Institution: | University of Illinois at Urbana-Champaign |
Degree: | M.S. |
Genre: | Thesis |
Subject(s): | Gallium nitride (GaN)
Metal-Oxide-Semiconductor (MOS) High-Electron-Mobility Transistor (HEMT) Reliability |
Abstract: | This thesis presents the experiment setup and result of AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors (MOS-HEMTs) characterization. Various aspects of GaN MOS-HEMTs, such as the DC characteristic, temperature dependency, breakdown behavior and trap-related effects, were studied. Multiple customized measurement setups and configurations, including hardware and software, are discussed. We have estimated trap distribution using the capacitance and the conductance method. Pulse measurements and stress tests with various bias conditions were used to understand trap-related degradations. Performance and trap-related comparisons between our device and the literature are also included. |
Issue Date: | 2015-04-30 |
Type: | Text |
URI: | http://hdl.handle.net/2142/78692 |
Rights Information: | Copyright 2015 Dabin Zhang |
Date Available in IDEALS: | 2015-07-22 2017-07-23 |
Date Deposited: | May 2015 |
This item appears in the following Collection(s)
-
Dissertations and Theses - Electrical and Computer Engineering
Dissertations and Theses in Electrical and Computer Engineering -
Graduate Dissertations and Theses at Illinois
Graduate Theses and Dissertations at Illinois