Files in this item

FilesDescriptionFormat

application/pdf

application/pdfZHANG-THESIS-2015.pdf (3MB)Restricted to U of Illinois
(no description provided)PDF

Description

Title:Characterization of GaN MOS-HEMT trap-related effects for power switching applications
Author(s):Zhang, Dabin
Department / Program:Electrical & Computer Eng
Discipline:Electrical & Computer Engr
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:M.S.
Genre:Thesis
Subject(s):Gallium nitride (GaN)
Metal-Oxide-Semiconductor (MOS)
High-Electron-Mobility Transistor (HEMT)
Reliability
Abstract:This thesis presents the experiment setup and result of AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors (MOS-HEMTs) characterization. Various aspects of GaN MOS-HEMTs, such as the DC characteristic, temperature dependency, breakdown behavior and trap-related effects, were studied. Multiple customized measurement setups and configurations, including hardware and software, are discussed. We have estimated trap distribution using the capacitance and the conductance method. Pulse measurements and stress tests with various bias conditions were used to understand trap-related degradations. Performance and trap-related comparisons between our device and the literature are also included.
Issue Date:2015-04-30
Type:Thesis
URI:http://hdl.handle.net/2142/78692
Rights Information:Copyright 2015 Dabin Zhang
Date Available in IDEALS:2015-07-22
Date Deposited:May 2015


This item appears in the following Collection(s)

Item Statistics