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Title:Selective area epitaxy of III-V nanowires: toward nanowire-on-silicon tandem solar cells
Author(s):Bassett, Kevin Paul
Director of Research:Li, Xiuling
Doctoral Committee Chair(s):Li, Xiuling
Doctoral Committee Member(s):Lyding, Joseph W.; Carney, Paul S.; Dragic, Peter D
Department / Program:Electrical & Computer Eng
Discipline:Electrical & Computer Engr
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):nanowire
epitaxy
metalorganic chemical vapor deposition (MOCVD)
compound semiconductors
Abstract:Nanowires grown via the selective area epitaxy technique (SAE-NWs) are of great research interest for use in next-generation electronic and electro-optic devices. As compared to other nanowire growth techniques commonly studied, SAE-NW is a highly controllable process due to the use of a lithographically defined growth mask, and the lack of need for a catalytic seed particle results in impurity-free material with nearly atomically flat sidewalls formed on low index crystal facets. In this thesis, the SAE-NW growth technique is examined and progress in the field is reviewed. A study of the geometric evolution of SAE-NWs during growth is presented, followed by results of efforts to work towards fabrication of a tunnel diode for use in a nanowire-on-silicon solar cell. Finally, future directions for the continued study of SAE-NWs are outlined.
Issue Date:2015-04-22
Type:Thesis
URI:http://hdl.handle.net/2142/78768
Rights Information:Copyright 2015 Kevin Paul Bassett
Date Available in IDEALS:2015-07-22
Date Deposited:May 2015


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