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Title:Novel Reactions on Halogen -Terminated Si(100)
Author(s):Trenhaile, Brent Reid
Doctoral Committee Chair(s):Weaver, John H.
Department / Program:Physics
Discipline:Physics
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Physics, Condensed Matter
Abstract:Finally, the initial stage of oxidation was studied for H2O-exposed Si(100) in the presence of Cl. Following H2O dissociation and saturation of the surface with Cl, a mild anneal allowed oxygen atoms to insert into Si dimer bonds. It was demonstrated that Cl allowed the bridge-bonded oxygen atoms to be imaged as a dark spot in the center of the dimer. The density of these "split dimer" defects correlated with the c-type defect density on the clean surface. These results also showed how to produce nearly defect free halogen-terminated Si(100).
Issue Date:2006
Type:Text
Language:English
Description:85 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006.
URI:http://hdl.handle.net/2142/80543
Other Identifier(s):(MiAaPQ)AAI3250336
Date Available in IDEALS:2015-09-25
Date Deposited:2006


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