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 Title: Interfacial Studies of Buried Semiconductor Surfaces Author(s): Aburano, Richard Dean Doctoral Committee Chair(s): Chiang, Tai-Chang Department / Program: Physics Discipline: Physics Degree Granting Institution: University of Illinois at Urbana-Champaign Degree: Ph.D. Genre: Dissertation Subject(s): Engineering, Materials Science Abstract: X-ray scattering has been used to study the structures of various semiconductor interfaces. Investigations have been performed on noble-metal/Si(111) and C60/semiconductor systems. The bulk of the noble-metal/Si(111) work has centered on the Ag/Si(111) system where the structure of the interface is dependent on the interfacial preparation. The results of the C60/semiconductor studies revealed C60/Si(111), C60/Si(100), and C60/Ge(100) interfaces retain the periodicities of the clean semiconductor surface reconstructions. In fact, the atomic features of these reconstructions from the dimerized (100) surfaces to the adatoms of the Si(111)-(7 $\times$ 7) surface were preserved under the fullerene film. This is an exceptional result since buried reconstructed surfaces typically revert to a bulk-like (1 $\times$ 1) interfacial structure. These studies were performed in the traditional "Bragg" or reflection geometry. The use of the "Laue" or transmission geometry for similar structural studies was also evaluated. Issue Date: 1997 Type: Text Language: English Description: 175 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997. URI: http://hdl.handle.net/2142/80642 Other Identifier(s): (MiAaPQ)AAI9737028 Date Available in IDEALS: 2015-09-25 Date Deposited: 1997
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