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Title:Interfacial Studies of Buried Semiconductor Surfaces
Author(s):Aburano, Richard Dean
Doctoral Committee Chair(s):Chiang, Tai-Chang
Department / Program:Physics
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Materials Science
Abstract:X-ray scattering has been used to study the structures of various semiconductor interfaces. Investigations have been performed on noble-metal/Si(111) and C60/semiconductor systems. The bulk of the noble-metal/Si(111) work has centered on the Ag/Si(111) system where the structure of the interface is dependent on the interfacial preparation. The results of the C60/semiconductor studies revealed C60/Si(111), C60/Si(100), and C60/Ge(100) interfaces retain the periodicities of the clean semiconductor surface reconstructions. In fact, the atomic features of these reconstructions from the dimerized (100) surfaces to the adatoms of the Si(111)-(7 $\times$ 7) surface were preserved under the fullerene film. This is an exceptional result since buried reconstructed surfaces typically revert to a bulk-like (1 $\times$ 1) interfacial structure. These studies were performed in the traditional "Bragg" or reflection geometry. The use of the "Laue" or transmission geometry for similar structural studies was also evaluated.
Issue Date:1997
Description:175 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997.
Other Identifier(s):(MiAaPQ)AAI9737028
Date Available in IDEALS:2015-09-25
Date Deposited:1997

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