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Title:Nucleation and Growth of Order in Cu(3)Au (111) Films
Author(s):Bonham, Scott William
Doctoral Committee Chair(s):C. Peter Flynn
Department / Program:Physics
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Materials Science
Abstract:During epitaxial growth of (111) face-centered cubic crystal films, such as disordered $\rm Cu\sb3Au,$ there are two possible ways that successive layers can be laid down, leading to two types of stacking domains. However, a small vicinal miscut $(0.5\sp\circ {-}1\sp\circ )$ of the crystal surface introduces step edges that change nucleation preferences of the domains, resulting in one being preferred over the other by ratios up to 700:1. Fifteen samples were measured and this preference has been found to depend systematically and strongly on the magnitude and direction of the sample miscut. A qualitative RHEED study confirms that a preference for one of the stacking senses is present after deposition of a few monlolayers of $\rm Cu\sb3Au.$ The observed behavior of the film can be explained by a model in which Cu and Au atoms minimize their number of Nb nearest neighbors when growing over the Nb step edges. This represents both a discovery of a new phenomena in epitaxial nucleation and a technique for the production of improved epitaxial films.
Issue Date:1997
Description:116 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997.
Other Identifier(s):(MiAaPQ)AAI9737056
Date Available in IDEALS:2015-09-25
Date Deposited:1997

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