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Title:Density Functional Study of Hydrogen in Amorphous Silicon
Author(s):Tuttle, Blair R.
Doctoral Committee Chair(s):Adams, James B.
Department / Program:Physics
Discipline:Physics
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Physics, Condensed Matter
Abstract:Our calculations clarify the role of H during electronic defect formation. We calculate the energetics for H to move from a variety of Si-H bonds to the bulk chemical potential. For isolated Si-H bonds (i.e. in micro-cavities without any bond reconstruction) the energetics are not consistent with observations. However, if the remaining Si reconstructs with a nearby silicon creating a 5-fold coordinated defect then the energetics are in agreement with observations. Therefore, our results indicate that the dangling bond model for intrinsic defects in amorphous silicon should be revisited.
Issue Date:1997
Type:Text
Language:English
Description:101 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997.
URI:http://hdl.handle.net/2142/80649
Other Identifier(s):(MiAaPQ)AAI9812793
Date Available in IDEALS:2015-09-25
Date Deposited:1997


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