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Title:Surface Structure and Growth Mechanisms of Hydrogenated Amorphous Silicon
Author(s):Kilian, Karland Arthur
Doctoral Committee Chair(s):Adams, James B.
Department / Program:Physics
Discipline:Physics
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Electronics and Electrical
Abstract:We investigate two pathways for SiH3 incorporation into growing a-Si:H. It has been thought that growth proceeds by H abstraction by atomic H or SiH3. Recently, a mechanism of direct insertion of SiH3 into a surface Si-Si bond has been proposed to explain new IR data. We determine the activation energies for key steps in these pathways, and discuss the validity of each in light of our results.
Issue Date:1999
Type:Text
Language:English
Description:110 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999.
URI:http://hdl.handle.net/2142/80666
Other Identifier(s):(MiAaPQ)AAI9921704
Date Available in IDEALS:2015-09-25
Date Deposited:1999


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