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Title:Core-Level Photoemission Studies of the Structure of Semiconductor Surfaces and Interfaces
Author(s):Luh, Dah-An
Doctoral Committee Chair(s):T.-C. Chiang
Department / Program:Physics
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Physics, Condensed Matter
Abstract:To determine to the chemical depth profile of the Si(111)/SiO2 interface, the photoemission intensity of the Si 2p core level from the Si(111)/SiO2 system has been measured as a function of photoelectron emission angle. The SiO2 layer is amorphous, and photoelectron diffraction techniques cannot be employed. A new approach based on the abrupt-interface model is used to study the structure of the Si(111)/SiO 2 interface. In this model, all the sub-oxide states are confined at the interface area, and the interface is formed by cross-linking dangling bonds between the truncated Si(111) and SiO2 surfaces. Our results show that this simple statistical cross-linking model reproduces the intensity ratios among different suboxide states, thus confirming the abrupt-interface model.
Issue Date:2000
Description:109 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000.
Other Identifier(s):(MiAaPQ)AAI9971127
Date Available in IDEALS:2015-09-25
Date Deposited:2000

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