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Title:Development of Direct Ion -Implanted Gallium Arsenide MESFET and Low-Actuation-Voltage RF MEM Switches
Author(s):Shen, Shyh-Chiang
Doctoral Committee Chair(s):Feng, Milton
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Electronics and Electrical
Abstract:The high-performance GaAs MESFETs will provide a solution to low-cost NMCs, and the circuit results justify the readiness of this technology in Ka-band and V-band applications. The low operation-voltage switches will facilitate the direct integration with current MMICs and provide a solution to broadband reconfigurable circuits. The mature GaAs MESFET technology integrated with RF MEM switches will have a direct impact on RF circuit applications in the future.
Issue Date:2001
Type:Text
Language:English
Description:95 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001.
URI:http://hdl.handle.net/2142/80739
Other Identifier(s):(MiAaPQ)AAI3023195
Date Available in IDEALS:2015-09-25
Date Deposited:2001


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