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Title:Exploratory Investigation of Erbium Silicide NMOS as a Candidate for a Schottky Barrier CMOS Process
Author(s):Faulkner, Carl McCarty
Doctoral Committee Chair(s):Tucker, John R.
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Electronics and Electrical
Abstract:Long channel transistors using both platinum and erbium silicide are fabricated and their performance compared. Processing issues, including erbium's reactivity with oxide and tendency to creep, and how they affect the NMOS performance, are discussed.
Issue Date:2001
Type:Text
Language:English
Description:48 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001.
URI:http://hdl.handle.net/2142/80748
Other Identifier(s):(MiAaPQ)AAI3030431
Date Available in IDEALS:2015-09-25
Date Deposited:2001


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