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Title:Compliant Epitaxy of Iii-V Compound Semiconductors for Optoelectronic Device Applications
Author(s):Pickrell, Gregory William
Doctoral Committee Chair(s):Cheng, K.Y.
Department / Program:Electrical and Computer Engineering
Discipline:Electrical and Computer Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Electronics and Electrical
Abstract:The second technique uses a novel approach: very-low temperature molecular beam epitaxy (VLT-MBE) which involves growth of amorphous and polycrystalline materials. Using GaP and laterally oxidized AlAs materials, substrate independent DBRs were fabricated at wavelengths in both the visible spectrum, 480 nm to 550 nm, as well as those used in the telecommunications industry, 1310 nm to 1550 nm. In addition, VLTMBE-grown InGaP was used as a protection layer during post-growth oxidation processes. These InGaP layers were used to protect the In0.25Ga0.75As layers, mentioned above, during the lateral oxidation relaxation process. The VLT-grown InGaP films were found to be superior to other protection layers, such as SiNx and SiO 2, due to their ability to allow dislocation reduction during the oxidation process. Because of the nature of the VLT-grown materials, they can be used in any material system using a variety of host-substrates, making this growth technique highly adaptable and useful.
Issue Date:2002
Description:86 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2002.
Other Identifier(s):(MiAaPQ)AAI3044200
Date Available in IDEALS:2015-09-25
Date Deposited:2002

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