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Title:Development of Asymmetric Fabry -Perot Modulators and Power HBT Circuits for High-Speed Applications
Author(s):Huang, JianJang
Doctoral Committee Chair(s):Feng, Milton
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Electronics and Electrical
Abstract:To identify the limitation of DC performance of GaN HBTs, the CE IC-VCE modulation curves in AlGaN/GaN graded emitter HBTs at low temperature was studied in order to understand the limiting issues related to the low CE current gain of a GaN HBT. We have measured a CE current gain of 31.0 at 175 K and 11.3 at 295 K. The increase in collector current and CE current gain at lower temperature can be attributed to the reduced base recombination current, which is due to the carrier traps associated with defect (dislocation) centers in the base-emitter junction.
Issue Date:2002
Description:81 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2002.
Other Identifier(s):(MiAaPQ)AAI3070328
Date Available in IDEALS:2015-09-25
Date Deposited:2002

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