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Title:Aluminum Gallium Arsenide-Gallium Arsenide-Indium Gallium Arsenide-Indium Arsenide Quantum Dot Coupled to Quantum Well Heterostructure Lasers by Low-Pressure Metalorganic Chemical Vapor Deposition
Author(s):Chung, Theodore
Doctoral Committee Chair(s):Holonyak, Nick, Jr.
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Physics, Condensed Matter
Abstract:Data are presented showing that, besides the improvement in carrier collection, it is advantageous to locate strain-matching auxiliary InGaAs layers [quantum wells (QWs)] within tunneling distance of a single-quantum-dot (QD) layer of an AlGaAs-GaAs-InGaAs-InAs QD heterostructure laser to realize also smaller size QDs of greater density and uniformity. The QD density is changed from 2 x 1010/cm2 for a 50-A GaAs coupling barrier (QW to QD) to 3 x 1010/cm2 for a 5-A barrier. The improved QD density and uniformity, as well as improved carrier collection, make possible room-temperature continuous-wave (cw) QD + QW laser operation (a single InAs QD layer) at reasonable diode length (∼1 mm), current density 586 A/cm2, and wavelength 1057 nm. QW-assisted single-layer InAs QD laser, a QD + QW laser, is demonstrated that operates cw (300 K), and at diode length 150 mum in pulsed operation exhibits gain as high as ∼100 cm-1. The cw 300-K coupled InAs QD and InGaAs QW AlGaAs-GaAs-InGaA-InAs heterostructure lasers are grown by metalorganic chemical vapor deposition.
Issue Date:2003
Type:Text
Language:English
Description:63 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2003.
URI:http://hdl.handle.net/2142/80831
Other Identifier(s):(MiAaPQ)AAI3101818
Date Available in IDEALS:2015-09-25
Date Deposited:2003


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