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Title:Growth of Gallium Nitride-Based Nitride Semiconductors by PAMBE for Development of Optoelectronic and Microelectronic Devices
Author(s):Rhee, Seunghun
Doctoral Committee Chair(s):Kim, Kyekyoon
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Electronics and Electrical
Abstract:Several devices, i.e., homo junction light-emitting diode (HJ LED), multi-quantum well (MQW) LED, and buried gate junction field effect transistor (BGJFET), are fabricated by PAMBE and their characteristics are demonstrated to show the high quality of GaN-based nitride films grown by PAMBE.
Issue Date:2003
Type:Text
Language:English
Description:112 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2003.
URI:http://hdl.handle.net/2142/80840
Other Identifier(s):(MiAaPQ)AAI3101954
Date Available in IDEALS:2015-09-25
Date Deposited:2003


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