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Title:High Density Plasma Etching of Wide Bandgap Semiconductor Materials for Fabricating Novel Devices
Author(s):Khan, Farid Ahmed
Doctoral Committee Chair(s):I. Adesida
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Electronics and Electrical
Abstract:We also demonstrated the fabrication of recessed 0.15 mum gate-length AlGaN/GaN HEMTs using ICP-RIE on sapphire substrate. These devices exhibited high DC and RF performance. The drain current density as high as 1.31 A/mm, a peak transconductance of 401 mS/mm, an fT of 107 GHz and an f max of 148 GHz were measured on these devices. To the best of the authors' knowledge, this is the highest ever-reported value of gm for AlGaN/GaN HEMTs. Also, an fT of 107 GHz is the highest data for similar gate-length devices.
Issue Date:2004
Type:Text
Language:English
Description:79 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2004.
URI:http://hdl.handle.net/2142/80857
Other Identifier(s):(MiAaPQ)AAI3130951
Date Available in IDEALS:2015-09-25
Date Deposited:2004


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