Files in this item



application/pdf3130951.pdf (4MB)Restricted to U of Illinois
(no description provided)PDF


Title:High Density Plasma Etching of Wide Bandgap Semiconductor Materials for Fabricating Novel Devices
Author(s):Khan, Farid Ahmed
Doctoral Committee Chair(s):I. Adesida
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Electronics and Electrical
Abstract:We also demonstrated the fabrication of recessed 0.15 mum gate-length AlGaN/GaN HEMTs using ICP-RIE on sapphire substrate. These devices exhibited high DC and RF performance. The drain current density as high as 1.31 A/mm, a peak transconductance of 401 mS/mm, an fT of 107 GHz and an f max of 148 GHz were measured on these devices. To the best of the authors' knowledge, this is the highest ever-reported value of gm for AlGaN/GaN HEMTs. Also, an fT of 107 GHz is the highest data for similar gate-length devices.
Issue Date:2004
Description:79 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2004.
Other Identifier(s):(MiAaPQ)AAI3130951
Date Available in IDEALS:2015-09-25
Date Deposited:2004

This item appears in the following Collection(s)

Item Statistics