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Title:Aluminum Gallium Nitride/gallium Nitride HEMTs for High-Power Applications: Transistor Design Issues and Process Development
Author(s):Kuliev, Almaz S.
Doctoral Committee Chair(s):I. Adesida
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Electronics and Electrical
Abstract:In this work, the development of fabrication process and transistor designs for high-performance AlGaN/GaN HEMTS required for high-power applications are presented. Three transistor designs under study are a gate-recessed HEMT, asymmetric HEMT with varying gate-drain spacing, and field-plate HEMT. Each transistor design offers a trade-off between microwave and DC characteristics as the key design parameter is varied. The knowledge of this trade-off is crucial in the design of AlGaN/GaN HEMTS. Dependence of DC, microwave and large signal performance on design parameters is presented so that the trade-off between DC and microwave characteristics can be established, which will facilitate the optimization of AlGaN/GaN HEMT design for high-power applications. This work contributes to the developmental research in the field of GaN-based FETs.
Issue Date:2004
Type:Text
Language:English
Description:97 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2004.
URI:http://hdl.handle.net/2142/80859
Other Identifier(s):(MiAaPQ)AAI3130961
Date Available in IDEALS:2015-09-25
Date Deposited:2004


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