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Title:Ohmic Contacts to N -Type Gallium Nitride Based Semiconductors
Author(s):Selvanathan, Deepak
Doctoral Committee Chair(s):Adesida, Ilesanmi
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Materials Science
Abstract:In this work, the development and characterization of electrical and materials performance of ohmic contacts are presented. Surface treatment techniques were developed to improve the electrical characteristics of ohmic contacts. Ti/Al/Mo/Au metallization scheme was developed to form ohmic contacts to n-GaN, n-AlxGa1-xN, and AlGaN/GaN HEMTs. Materials microstructural analysis techniques were used to understand the evolution of electrical behavior of these contacts at higher temperatures.
Issue Date:2004
Type:Text
Language:English
Description:94 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2004.
URI:http://hdl.handle.net/2142/80864
Other Identifier(s):(MiAaPQ)AAI3131020
Date Available in IDEALS:2015-09-25
Date Deposited:2004


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