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Title:Three -Port Modulation of Indium Gallium Phosphide/gallium Arsenide Transistor Lasers
Author(s):Chan, Richard T.
Doctoral Committee Chair(s):Feng, Milton
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Electronics and Electrical
Abstract:Further material structure modification leads to the laser operation (quasi-continuous, ∼200 K) of an InGaP/GaAs/InGaAs HBLET with AlGaAs confining layers and an InGaAs recombination QW incorporated in the p-type base region. Furthermore, the microwave operation and modulation (3 GHz) of an InGaP/GaAs HBT laser is reported using a 450-mum long cavity. The shift in HBT laser operation from spontaneous to stimulated emission is manifest as a distinct change in the HBT current-voltage characteristics, specifically a decrease in the common-emitter current gain (betadc = IC/IB) and the occurrence of even a more striking peak in the small signal (ac) gain betaac = DeltaIC/DeltaIB. Using a larger QW width to enhance the radiative recombination process, direct three-port modulation of a transistor laser at 13.5 GHz is demonstrated using a device with a 4 x 340 mum2 emitter operating at 243 K.
Issue Date:2005
Type:Text
Language:English
Description:79 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2005.
URI:http://hdl.handle.net/2142/80917
Other Identifier(s):(MiAaPQ)AAI3198939
Date Available in IDEALS:2015-09-25
Date Deposited:2005


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