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Title:High-Speed Silicon-Germanium BiCMOS and Indium Phosphide DHBT Receiver ICs for Optical and Wireless Communications
Author(s):He, Qiurong
Doctoral Committee Chair(s):Feng, Milton
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Electronics and Electrical
Abstract:Finally, three different types of active inductors and their applications to VCOs (AIVCOs) and low-pass filters were designed and fabricated with the SiGe and InP processes. The InP AIVCOs demonstrate 20-GHz oscillation frequency and over 50% tuning range. The measured do power for a single InP active inductor is only 15 mW from a 4-V power supply.
Issue Date:2005
Type:Text
Language:English
Description:65 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2005.
URI:http://hdl.handle.net/2142/80923
Other Identifier(s):(MiAaPQ)AAI3199016
Date Available in IDEALS:2015-09-25
Date Deposited:2005


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