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Title:Detecting DNA Using Silicon Nanopores and 20--40 Nm Gate-Length RFNMOSFET
Author(s):Heng, Jiunn Benjamin
Doctoral Committee Chair(s):Gregory Timp
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Electronics and Electrical
Abstract:Lastly, we describe using a nanopore in a MOS-capacitor membrane to sense the charge in DNA. As DNA translocates the nanopore, the electrostatic charge distribution should polarize the capacitor and induce a voltage on the electrodes, which will be measured by our nanotransistors implemented right next to them. Silicon nanofabrication and MD simulations are technological linchpins in the development of this detector.
Issue Date:2005
Type:Text
Language:English
Description:178 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2005.
URI:http://hdl.handle.net/2142/80924
Other Identifier(s):(MiAaPQ)AAI3199019
Date Available in IDEALS:2015-09-25
Date Deposited:2005


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