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Title:Development of Iridium-Based Gate Structure for Indium Aluminum Arsenide/indium Gallium Arsenide/indium Phosphide Enhancement-Mode and Depletion-Mode High Electron Mobility Transistors
Author(s):Kim, Seiyon
Doctoral Committee Chair(s):Adesida, Ilesanmi
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Electronics and Electrical
Abstract:Consequently, Ir-based gate metallization has a potential to replace conventional gate metals such as Ti/Pt/Au for D-HEMTs and Pt/Ti/Pt/Au for E-HEMTs. Due to the high thermal stability of Ir-based gate contacts, highly reliable E/D-HEMT circuit utilizing Ir-based gate structure can be realized.
Issue Date:2005
Type:Text
Language:English
Description:90 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2005.
URI:http://hdl.handle.net/2142/80928
Other Identifier(s):(MiAaPQ)AAI3199049
Date Available in IDEALS:2015-09-25
Date Deposited:2005


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