Files in this item



application/pdf3199051.pdf (4MB)Restricted to U of Illinois
(no description provided)PDF


Title:Silicon Nanoelectronic Devices Fabricated by Ultra-High Vacuum, Scanning Tunneling Microscope Nanolithography
Author(s):Kline, Jeffrey Scott
Doctoral Committee Chair(s):Tucker, John R.
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Physics, Condensed Matter
Abstract:Electrical and magnetotransport measurements are carried out at low temperature on various device geometries. Two-dimensional unpatterned delta-doped samples yield ohmic conduction and sharp positive magnetoconductance: a characteristic of a weakly localized electron gas. The 2D electron density (∼ 1 x 1014 cm-2) is significantly higher than modulation-doped structures. This allows the lateral patterning of low-dimensional devices without the formation of undesirable carrier depletion regions. STM-patterned nanowires 12-200 nm wide and 750 nm long patterned by STM nanolithography are electrically connected to the outside world using ion implanted contacts. Nanowires ≥ 30 nm wide exhibit ohmic conduction. Magnetoconductance curves are analyzed in terms of weak localization theory. Nonlinear conduction resembling coulomb blockade is observed in a 12 nm wide nanowire and may be due to the formation on unintentional tunnel barriers at the nanowire contacts. The fabrication process outlined within may be extended toward the fabrication of single electron transistors (SETs).
Issue Date:2005
Description:79 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2005.
Other Identifier(s):(MiAaPQ)AAI3199051
Date Available in IDEALS:2015-09-25
Date Deposited:2005

This item appears in the following Collection(s)

Item Statistics