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Title:Large Signal HBT Model and Integrated Circuit Design Using 300-Ghz Indium Phosphide HBT Technology
Author(s):Lai, Jie-Wei
Doctoral Committee Chair(s):Feng, Milton
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Electronics and Electrical
Abstract:This work describes a modeling approach including the nonlinear effects in the base-collector region covering current blocking, velocity modulation and self-heating. Model is verified in terms of single devices and integrated circuits. Good fitting to the measured DC and high-frequency data from single HBTs is achieved. In terms of circuit verification, high-gain and wideband variable gain amplifier (VGA) is developed using a negative-RE approach. This circuit shows a single-ended S21 of 18 dB and a 3-dB bandwidth of 50 GHz, producing a gain-bandwidth product of 397 GHz which is over two times of the value measured from the VGA designed by conventional method in the same process. Linearity is measured, and the model developed in this work shows the best prediction, which indicates that the nonlinear mechanisms inherent in InP/InGaAs DHBTs cannot be neglected. More design examples are provided with technology considerations, giving a complete discussion of designing very high-frequency circuits.
Issue Date:2005
Description:103 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2005.
Other Identifier(s):(MiAaPQ)AAI3199055
Date Available in IDEALS:2015-09-25
Date Deposited:2005

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