Files in this item



application/pdf3202194.pdf (2MB)Restricted to U of Illinois
(no description provided)PDF


Title:Indium Phosphide Based Indium Arsenide Quantum Dot Infrared Photodetectors
Author(s):Zhang, Zhenhua
Doctoral Committee Chair(s):Cheng, K.Y.
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Electronics and Electrical
Abstract:Based on the developed QD growth techniques, photoconductive InAs/InAlGaAs/InP QDIPs grown on InP by MBE technique were presented. These devices demonstrated responses to normal incident photoexcitations in the 5-18-mum range. The QDIP device based on bound-to-bound transitions shows a peak responsivity of 113 mA/W and a detectivity of 1.8 x 10 9 cmHz1/2/W at 10 K for a 10-period QD heterostructure. The device based on bound-to-continuum transitions demonstrates an improved dark current characteristics and a better detectivity of 2.1 x 10 9 cmHz1/2/W.
Issue Date:2005
Description:104 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2005.
Other Identifier(s):(MiAaPQ)AAI3202194
Date Available in IDEALS:2015-09-25
Date Deposited:2005

This item appears in the following Collection(s)

Item Statistics