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Title:Indium Phosphide Based Indium Arsenide Quantum Dot Infrared Photodetectors
Author(s):Zhang, Zhenhua
Doctoral Committee Chair(s):Cheng, K.Y.
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Electronics and Electrical
Abstract:Based on the developed QD growth techniques, photoconductive InAs/InAlGaAs/InP QDIPs grown on InP by MBE technique were presented. These devices demonstrated responses to normal incident photoexcitations in the 5-18-mum range. The QDIP device based on bound-to-bound transitions shows a peak responsivity of 113 mA/W and a detectivity of 1.8 x 10 9 cmHz1/2/W at 10 K for a 10-period QD heterostructure. The device based on bound-to-continuum transitions demonstrates an improved dark current characteristics and a better detectivity of 2.1 x 10 9 cmHz1/2/W.
Issue Date:2005
Type:Text
Language:English
Description:104 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2005.
URI:http://hdl.handle.net/2142/80951
Other Identifier(s):(MiAaPQ)AAI3202194
Date Available in IDEALS:2015-09-25
Date Deposited:2005


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