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Title:Process Development for Aluminum Gallium Nitride-Based Enhancement- and Depletion -Mode HEMTs
Author(s):Lanford, William B.
Doctoral Committee Chair(s):I. Adesida
Department / Program:Electrical and Computer Engineering
Discipline:Electrical and Computer Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Electronics and Electrical
Abstract:This dissertation documents the development of high-performance gate-recessed HEMTs in the AlGaN-GaN material system. The primary goal of the dissertation research is the development of processes that are suitable for fabrication of AlGaN/GaN HEMTs with precise threshold voltage control for both enhancement- and depletion-mode operation. The specific areas of research include controllable and low-damage gate-recess etching, damage-removing annealing processes, and metal structures for Schottky gate contacts. Both E-HEMTs and D-HEMTs are made in order to study the effect of recess etching, post-etch annealing, and post gate annealing processes on device characteristics.
Issue Date:2006
Description:88 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006.
Other Identifier(s):(MiAaPQ)AAI3242909
Date Available in IDEALS:2015-09-25
Date Deposited:2006

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