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Title:Molecular Beam Epitaxy of Gallium Arsenide Antimonide-Based Ultra-High-Speed Double Heterojunction Bipolar Transistors and Light Emitting Transistors
Author(s):Wu, Bing-Ruey
Doctoral Committee Chair(s):Cheng, Keh-Yung
Department / Program:Electrical and Computer Engineering
Discipline:Electrical and Computer Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Materials Science
Abstract:In this work, GaAsSb-based double heterojunction bipolar transistors (DHBTs) and light emitting transistors (LETs) are grown using gas source molecular beam epitaxy (GSMBE). High-speed GaAs0.5Sb0.5/InP DHBTs are developed through the exercise of GSMBE growth optimization, device fabrication, and characterization. By adjusting the growth temperature and V/III flux ratio, the optimal conditions for growing GaAs0.5Sb0.5 base are found to be at high growth temperature and low V/III ratio. The switching sequence is also optimized so that the Sb segregation effect is minimized. By using GaAs0.5Sb0.5-In0.2Ga0.8As 0.7Sb0.3 compositional grading in the base of the GaAsSb/InP DHBT, a significant improvement of fT from 380 GHz to 500 GHz was achieved compared to a uniform GaAs0.5Sb 0.5 DHBT, while maintaining a high breakdown voltage BVCEO ∼ 4V. The cutoff frequency---breakdown voltage product, fT·BVCEO, of over 2000 GHz-V, is the record value for DHBTs of any material system. Incorporating graded InAs-InGaAs emitter contact layer is also shown to effectively reduce the total emitter resistance, further improving the DHBT high speed performance. LET characteristics with quantum wells (QWs) inserted into the base region of GaAsSb/InP DHBTs are also investigated and the preliminary results are presented. An LET with a tensile strained InGaAsSb/GaAs0.65Sb 0.35 DQW in the base was designed and achieved the emission wavelength of ∼1.6 mum, despite of its low light output intensity. The potential and limitation of realizing a transistor laser with an emission wavelength of 1.55 mum using GaAsSb/InP material system will be discussed.
Issue Date:2006
Type:Text
Language:English
Description:91 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006.
URI:http://hdl.handle.net/2142/81001
Other Identifier(s):(MiAaPQ)AAI3250345
Date Available in IDEALS:2015-09-25
Date Deposited:2006


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