Files in this item

FilesDescriptionFormat

application/pdf

application/pdf3290362.pdf (4MB)Restricted to U of Illinois
(no description provided)PDF

Description

Title:Fabrication and Transport Properties of Silicon Nanoelectronic Devices
Author(s):Robinson, Stephen John
Doctoral Committee Chair(s):John Tucker
Department / Program:Electrical and Computer Engineering
Discipline:Electrical and Computer Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Physics, Condensed Matter
Abstract:The research presented herein is based on the fabrication and transport properties of nanometer-scale devices in silicon. The most promising of these structures are nanowires fabricated with a scanning tunneling microscope (STM). These high-density nanowires display the low-temperature phenomena of weak localization and one-dimensional conduction. Long-term applications of such nanowires and derivative devices include alternatives to conventional CMOS transistors and very sensitive charge and/or spin-detection devices. In addition, focused ion beams (FIBs) have been used to directly and precisely implant ions in the hope that they may be used to contact nanodevices, but surface damage may preclude that possibility.
Issue Date:2007
Type:Text
Language:English
Description:129 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2007.
URI:http://hdl.handle.net/2142/81043
Other Identifier(s):(MiAaPQ)AAI3290362
Date Available in IDEALS:2015-09-25
Date Deposited:2007


This item appears in the following Collection(s)

Item Statistics