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Title:Process Development and Device Characteristics of Aluminum Gallium Nitride/gallium Nitride HEMTs for High Frequency Applications
Author(s):Kim, Dong Hyun
Doctoral Committee Chair(s):Adesida, Ilesanmi
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Electronics and Electrical
Abstract:Finally, a novel SiN/ALD Al2O3/SiN dielectric trilayer T-gate formation process was developed for nanometer-scale (∼50 nm) recessed T-gate devices. Using a novel isotropic dry etching method, the top SiN layer was selectively removed without affecting the bottom dielectric stack. The devices showed a maximum fT of 127 GHz, fmax of 163 GHz at the drain-to-source bias (Vds) of 4 V. An fmax of 190 GHz and fT of 105 GHz were attained at Vds of 10 V.
Issue Date:2008
Type:Text
Language:English
Description:107 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2008.
URI:http://hdl.handle.net/2142/81077
Other Identifier(s):(MiAaPQ)AAI3314816
Date Available in IDEALS:2015-09-25
Date Deposited:2008


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