Files in this item
Files | Description | Format |
---|---|---|
application/pdf ![]() ![]() | (no description provided) |
Description
Title: | Low Temperature Selective Silicon Epitaxy at the Nanometer Scale |
Author(s): | Sztelle, Matthew Mark |
Doctoral Committee Chair(s): | Lyding, Joseph W. |
Department / Program: | Electrical and Computer Engineering |
Discipline: | Electrical and Computer Engineering |
Degree Granting Institution: | University of Illinois at Urbana-Champaign |
Degree: | Ph.D. |
Genre: | Dissertation |
Subject(s): | Engineering, Electronics and Electrical |
Abstract: | A technique for providing low-temperature, nanometer scale, selective silicon epitaxy using the hydrogen-passivated silicon surface as a lithographic mask has been developed. The STM tip is used to define chemically reactive templates on the monohydride Si(100) surface at temperatures below the monohydride desorption peak, 540 °C. Disilane gas is used to deposit silicon and silicon-hydride species on the exposed clean silicon. For low temperatures (1.0x10-8 Torr) the STM tip can be used to remove hydrogen, allowing epitaxy to occur and a fresh silicon surface to be exposed. Repeating this cycle promotes epitaxial growth. At higher temperatures (>177 °C) and lower disilane pressures (≤2.5x10 -9 Torr) short-clean silicon islands form without requiring the STM tip to remove hydrogen in the patterned regions at temperatures below the dihydride desorption peak, 425 °C, thereby adding a processing variable. At sufficient temperatures (310 °C), silicon field-evaporated from the tip may form into an epitaxial film; using this technique, a bilayer of epitaxial growth is demonstrated. The STM tip is used to modify the edges of this structure through the hydrogen removal and selective deposition technique. Also discussed will be the reasonable temperature limits for pattern fidelity. |
Issue Date: | 2008 |
Type: | Text |
Language: | English |
Description: | 70 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2008. |
URI: | http://hdl.handle.net/2142/81104 |
Other Identifier(s): | (MiAaPQ)AAI3337936 |
Date Available in IDEALS: | 2015-09-25 |
Date Deposited: | 2008 |
This item appears in the following Collection(s)
-
Dissertations and Theses - Electrical and Computer Engineering
Dissertations and Theses in Electrical and Computer Engineering -
Graduate Dissertations and Theses at Illinois
Graduate Theses and Dissertations at Illinois