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Title:Advanced Processing Techniques for Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistors
Author(s):Basu, Anirban
Doctoral Committee Chair(s):Adesida, Ilesanmi
Department / Program:Electrical and Computer Engineering
Discipline:Electrical and Computer Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Electronics and Electrical
Abstract:Using all the processing advancements demonstrated through the research undertaken in this dissertation highlights the potential of GaN-based transistors for next generation millimeter-wave applications, and possibly digital applications.
Issue Date:2009
Type:Text
Language:English
Description:186 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2009.
URI:http://hdl.handle.net/2142/81123
Other Identifier(s):(MiAaPQ)AAI3362727
Date Available in IDEALS:2015-09-25
Date Deposited:2009


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