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Title:Drifting -Dipole Noise Model of Nanometer MOSFETs for Radio Frequency Integrated Circuit Design
Author(s):Nguyen, Giang Dong
Doctoral Committee Chair(s):Feng, Milton; Chiu, Yun
Department / Program:Electrical and Computer Engineering
Discipline:Electrical and Computer Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Electronics and Electrical
Abstract:As the MOSFET is scaled down, the lateral field across the device channel becomes comparable to, or even exceeds, the vertical field. The device can no longer be considered as operating under equilibrium condition, and the thermal noise theory is no longer applicable to predicting its performance. This work describes a new noise formulation that takes into account high-field effects by using the concept of unrelaxable drifting dipoles. The proposed noise model is verified for single devices as well as for integrated circuits. Excellent fitting results are achieved for the measured noise parameters of single 120-nm MOSFETs. For circuit validation, two high-performance low-noise amplifiers (LNA) have been demonstrated. The 3.1--10.6 GHz Ultra Wideband LNA shows very low noise figures NF of 3.5 to 4.3 dB as well as superior input-referred third-order interception points IIP 3 of 3.5 to 5.2 dBm across the design bandwidth. The other circuit, a 24-GHz LNA, achieves a gain of 19 dB, the highest gain published to date at this frequency band, while maintaining a comparative noise figure NF of 3.8 dB.
Issue Date:2009
Description:76 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2009.
Other Identifier(s):(MiAaPQ)AAI3406789
Date Available in IDEALS:2015-09-25
Date Deposited:2009

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