Advanced Process Development for Contacts to Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistors (Hemts)

Ofuonye, Benedict Chukwuka
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http://hdl.handle.net/2142/81156

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Title:Advanced Process Development for Contacts to Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistors (Hemts)
Author(s):Ofuonye, Benedict Chukwuka
Doctoral Committee Chair(s):Adesida, Ilesanmi
Department / Program:Electrical and Computer Engineering
Discipline:Electrical and Computer Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Electronics and Electrical
Abstract:The developed ion-implantation process was used to propose fabrication schemes for novel high speed self-aligned and non-self-aligned AlGaN/GaN high electron mobility trasistors (HEMTs) employing Ir/Pt/Au or Ni/Au gate and non-alloyed ohmic contact metallizations.
Issue Date:2009
Type:Text
Language:English
Description:111 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2009.
URI:http://hdl.handle.net/2142/81156
Other Identifier(s):(MiAaPQ)AAI3406791
Date Available in IDEALS:2015-09-25
Date Deposited:2009


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