Files in this item
| Files | Description | Format |
|---|---|---|
|
application/pdf  3406791.pdf (20MB) | (no description provided) |
Description
| Title: | Advanced Process Development for Contacts to Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistors (Hemts) |
| Author(s): | Ofuonye, Benedict Chukwuka |
| Doctoral Committee Chair(s): | Adesida, Ilesanmi |
| Department / Program: | Electrical and Computer Engineering |
| Discipline: | Electrical and Computer Engineering |
| Degree Granting Institution: | University of Illinois at Urbana-Champaign |
| Degree: | Ph.D. |
| Genre: | Dissertation |
| Subject(s): | Engineering, Electronics and Electrical |
| Abstract: | The developed ion-implantation process was used to propose fabrication schemes for novel high speed self-aligned and non-self-aligned AlGaN/GaN high electron mobility trasistors (HEMTs) employing Ir/Pt/Au or Ni/Au gate and non-alloyed ohmic contact metallizations. |
| Issue Date: | 2009 |
| Type: | Text |
| Language: | English |
| Description: | 111 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2009. |
| URI: | http://hdl.handle.net/2142/81156 |
| Other Identifier(s): | (MiAaPQ)AAI3406791 |
| Date Available in IDEALS: | 2015-09-25 |
| Date Deposited: | 2009 |
This item appears in the following Collection(s)
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Dissertations and Theses - Electrical and Computer Engineering
Dissertations and Theses in Electrical and Computer Engineering -
Graduate Dissertations and Theses at Illinois
Graduate Theses and Dissertations at Illinois