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Title:Manufacturable Millimeter-Wave Gallium Arsenide MESFET Integrated Circuit Technology
Author(s):Apostolakis, Peter J.
Doctoral Committee Chair(s):Feng, Milton
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Materials Science
Abstract:Speed, noise and gain measurements are reviewed for discrete and monolithic millimeter-wave and digital ICs. Future plans for low-noise 0.10 $\mu$m T-gate FETs using ion-implantation and electron-beam lithography techniques are also discussed.
Issue Date:1996
Type:Text
Language:English
Description:112 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1996.
URI:http://hdl.handle.net/2142/81166
Other Identifier(s):(MiAaPQ)AAI9625107
Date Available in IDEALS:2015-09-25
Date Deposited:1996


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