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Title:Cross-Sectional Scanning Tunneling Microscopy Investigations of Cleaved Iii-V Heterostructures
Author(s):Wu, Warren
Doctoral Committee Chair(s):Tucker, John R.
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Electronics and Electrical
Abstract:Fabrication technology and device sizes have reached the point where fluctuations on the atomic level may affect device performance. The need for a tool to characterize these structures has been satisfied by cross-sectional scanning tunneling microscopy (XSTM). This thesis details the development and application of XSTM to III-V heterostructures. An ultra-high vacuum (UHV) system dedicated to XSTM has been specifically designed and constructed as part of this work. Reported for the first time are XSTM cross-sections of self-assembled InAs quantum dots, XSTM cross-sections of quantum wires created by the strain-induced lateral-layer ordering (SILO) process as well as the first XSTM data on working device structures. These working device structures include a few resonant tunneling diode (RTD) structures, a quantum well infrared photodetector structure and a modulation doped field effect transistor (MODFET) structure. XSTM has proved useful in characterizing interface roughness, alloy fluctuations and individual atomic positions.
Issue Date:1997
Description:82 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997.
Other Identifier(s):(MiAaPQ)AAI9717349
Date Available in IDEALS:2015-09-25
Date Deposited:1997

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