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Title:Modulation-Doped Field-Effect Transistors for High-Power Microwave Applications
Author(s):Grundbacher, Ronald Waldo
Doctoral Committee Chair(s):I. Adesida
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Electronics and Electrical
Abstract:The effect of drain-sides cap recess distance on InGaAs/GaAs PHEMT device performance at both dc and rf frequencies is investigated. This investigation is achieved though the development of a four-layer electron beam resist technique and sequential wet and dry selective etching. A high linearity of device characteristics is important to minimize intermodulation of high frequency signals under high-power operation. The linearity of device performance is investigated through the comparison of InGaAs/GaAs PHEMTs and doped channel FETs at dc and rf operation. InP is investigated as a channel material for use in high-power FETs due to the intrinsic properties including high breakdown voltage, high electron saturation velocity, high electron velocity at high electric field, and high thermal conductivity. Forming low-resistance ohmic contacts to modulation-doped InP channel heterostructures is a challenging issue and is investigated through the study of ion-implanted alloyed contacts and through cap layer design for nonalloyed contacts.
Issue Date:1997
Description:118 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997.
Other Identifier(s):(MiAaPQ)AAI9737125
Date Available in IDEALS:2015-09-25
Date Deposited:1997

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