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 Title: High-Speed and High-Sensitivity Metal-Semiconductor-Metal Photodetectors for Optoelectronic Integrated Circuit Applications Author(s): Wohlmuth, Walter Anthony Doctoral Committee Chair(s): I. Adesida Department / Program: Electrical Engineering Discipline: Electrical Engineering Degree Granting Institution: University of Illinois at Urbana-Champaign Degree: Ph.D. Genre: Dissertation Subject(s): Engineering, Electronics and Electrical Abstract: A variety of techniques to enhance the sensitivity and bandwidth of front-illuminated MSMPDs is presented, proposed, and demonstrated. A reduction in the absorption layer thickness of a conventional InGaAs-based MSMPD enabled bandwidths in excess of 19 GHz, at a wavelength of 1.55 $\mu$m, to be obtained with the use of simple optical lithography tools. MSMPDs using an InGaAs absorption layer, employing a conventional layout, and utilizing transparent electrode materials composed of combinations of $\rm In\sb2O\sb3,$ CdO, and SnO$\sb2$ achieved responsivities of up to 0.69 A/W at a wavelength of 1.3 $\mu$m. Modifications to the layout of the conventional MSMPD enabled enormous reductions in dark current to be obtained. These modifications afford a reduction in dark current by reducing thermionic emission processes at the Schottky contacts of the MSMPDs. An MSMPD exhibiting 52.9 pA of dark current corresponding to a dark current density of 21.1 fA/$\rm\mu m\sp2$ was demonstrated. Issue Date: 1997 Type: Text Language: English Description: 139 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997. URI: http://hdl.handle.net/2142/81195 Other Identifier(s): (MiAaPQ)AAI9737292 Date Available in IDEALS: 2015-09-25 Date Deposited: 1997
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