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Title:High-Speed and High-Sensitivity Metal-Semiconductor-Metal Photodetectors for Optoelectronic Integrated Circuit Applications
Author(s):Wohlmuth, Walter Anthony
Doctoral Committee Chair(s):I. Adesida
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Electronics and Electrical
Abstract:A variety of techniques to enhance the sensitivity and bandwidth of front-illuminated MSMPDs is presented, proposed, and demonstrated. A reduction in the absorption layer thickness of a conventional InGaAs-based MSMPD enabled bandwidths in excess of 19 GHz, at a wavelength of 1.55 $\mu$m, to be obtained with the use of simple optical lithography tools. MSMPDs using an InGaAs absorption layer, employing a conventional layout, and utilizing transparent electrode materials composed of combinations of $\rm In\sb2O\sb3,$ CdO, and SnO$\sb2$ achieved responsivities of up to 0.69 A/W at a wavelength of 1.3 $\mu$m. Modifications to the layout of the conventional MSMPD enabled enormous reductions in dark current to be obtained. These modifications afford a reduction in dark current by reducing thermionic emission processes at the Schottky contacts of the MSMPDs. An MSMPD exhibiting 52.9 pA of dark current corresponding to a dark current density of 21.1 fA/$\rm\mu m\sp2$ was demonstrated.
Issue Date:1997
Description:139 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997.
Other Identifier(s):(MiAaPQ)AAI9737292
Date Available in IDEALS:2015-09-25
Date Deposited:1997

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